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the above structure is taken from "Exploiting Steep Sub-Threshold Swing of Tunnel FET for Energy-Efficient Leaky Integrate-and-Fire Neuron Model"
Hi. I am familiar with the following process for calculating conductivity from a Nyquist plot:
1. Run impedance on potentiostat
2. Plot - Imaginary Z vs Z
3. Generate equivalent circuit
4. Fit data
5. Calculate conductivity by entering the resistance value, thickness, and diameter of sample
My confusion is that, in the past, my spectra always had a semicircle. Now I am running samples which are giving basically a 45 degree line that starts to the right of 0 on the X axis. I believe I have an equivalent circuit (Resistor + Constant Phase Element/Resistor + Warburg element). My question is, are you able to calculate conductivity as long as you can extrapolate the resistance? In other words, if you have an equivalent circuit which contains a resistor, can you always calculate the conductivity? Or do you need a semi-circle? Thanks.
How to extract the circuit parameter value from IDC ZOR antenna?
Iam designing a buck converter of input 200V with an output V of 48V with current more than 10amp for charging a battery. Can we convert 200v to 48 v, What can be the design problems that i can face. Can u suggest me driver Circuit for this circuit
I want to use a switch in my circuit (in COMSOL) which will be ON after a certain time. So what are the switch settings for switch type and switching time required? For example, I have a simple circuit of 2 resistors connected in parallel with a voltage source and the switch is connected in series with one of the resistors (Circuit figure attached).
Can anyone help me with this?
In most cases, from generation to delivery, passing by transmissions and distribution, power is conveyed by three-phase circuits, encompassing two and single-phase circuits. On the other hand, power circuits with the number of phases higher than three are rather rare. Maybe a six-phase could be the only exception. What is the reason for this, after all?
Hello,
I have a technical question in my rectifier fabrications:
Actually i am trying to fabricate one rectifier that operates at 900 MHz (GSM band) and the second one operates at 2.45 GHz (WiFi Band). The one at 900 MHz, the measured S_11 is coherent with that of simulated, however the measured S_11 of the rectifier at 2.45 GHz always shifts to the left at 2.38 GHz. I literally tried everything to technically fix this problem. Does anyone have gone through this problem at higher frequency?
PS: The types of diode packaging and the capacitors in the rectifiers are 'murata' and the matching network is designed by distributed components (with stubs and microlines).
Thank you in advance for the help,
Hi everyone,
I was recently doing a simulation and actual measurement of a rectifier circuit, using the series diode SMS7630-079LF (Breakdown Voltage=2V). The output DC voltage obtained by my simulation did not exceed 1V (max Vout=0.93V when Pin=20dBm). However, the maximum DC voltage measured in the actual test was 3.4V, which is obviously incorrect.
I checked the circuit and there seems to be no problem. I am very confused.
Can anyone help me with this problem?
Greetings, what literally makes the simulation results of same model in CST and its equivalent circuit counter part in ADS ends up with distinct results. Say the S21 value of a model in CST is -30dB and its distributed circuit realization of the same in ADS was -60dB. so what results in such huge difference in values.
hi anyone
I used electrical circuit module and i have a resistor for measuring the power of the energy harvester.
how can i measure the average power in this simulation?
I am working on a coreless axial flux permanent magnet machine design, and am having issues with the transformation of magnetic equivalent circuits using 2D models.
I am anticipating your kind assistance.
Thanks
I am working on a TENG project and I would like to know some basic detail. What is the major difference between an open and short circuit operation of a TENG.
What is the permittivity of a metal surface?
How to measure the surface charge density of metal surfaces?
A boost PWM converter has the following data: VI = 125 to 350 V, VO = 380 V, PO = 6.8 to 68 W, and fs = 50 kHz. Compute the voltage and current stresses of the transistor and the diode. The parasitic resistances of the circuit elements are negligible. Implement the circuit in MATLAB/SIMULINK and verify the calculation with simulation results considering 4 working conditions that are (VImax , POmax), (VImax , POmin), (VImin , POmax), (VImin , POmin)
Can anyone help me with this calculation, not sure what to take full load voltage here and the use of lagging,
A single phase transformer is rated at 10kVA, 7200V/600V. During a short circuit test performed from the secondary side, the following values were obtained: VSC = 36V, ISC = 5.0A, PSC = 60W.
What is the %VR for this transformer at 80% full load, 0.7 power factor lagging ?
The paradox we are about to relate (or a close resemblance) goes back to 1963 (at the very least,) in a Fig. 2c of a paper by Buchta [1], although its true origin may well be much earlier.
Klein [2] describes the curious circumstance in the follow manner.
“Imagine a box black on a table with two electrodes A and B, protruding from opposite sdes. The experimenter comes from one side, and measures with a static voltmeter a voltage between A and B of, e.g., 1V. He then walks around to the opposite side of the box and measures the voltage between the same two points, but this time he measures only 0.1V.”
The circuit within the box, together with the two terminals A and B, and the connected voltmeters, is shown below. Positioned at the centre is a solenoid or electromagnet, connected to an A.C. supply. In this variation, the voltmeters are connected at the same time.
On the face of it, the voltmeters are connected to the same electrodes, and so the measurements should yield the same potential difference between these two points.
Do they yield the same values? Isn't it impossible that they don't register the same potential difference?
Our speculation
Cf.
Hello everyone,
I recently encountered a noise problem in my patch clamp experiments. I happened to observe a small current and a noise when the electrode holder was in the open circuit. The observed current was 20 pA in the open circuit and 8 pA when the reference electrode was immersed in bath. The observed noise was at 50 Hz in both instances. (Image 1: open circuit without bath) (Image 4; when both the reference and recording electrodes are immersed in bath)
All the devices are grounded in a common earth/ground line, in which all the equipment and cage around the system are grounded to the grounding bus, which is then connected to the Axopatch 200B signal ground.
My RMS (pA) values are around 9 during the membrane test, and they are between 2-6 pA during the episodic scope run. (Image 2: Episodic scope)
I use a microperfusion system without a vacuum suction unit to aspirate the perfusion out of the bath. And I use the help of gravitation to make the solutions flow.
I’ve tried grounding the microscope to the rear gold connector of the head stage, but unfortunately, it wasn’t helpful.
I checked to locate the source of noise by turning it off and unplugging them one by one, but the RMS value remained around 9 all the time. I’ve covered the light source on the roof with copper mesh that’s used to make Faraday cages. I’ve attached two more images for your kind reference of noise when only the reference electrode is in the bath (Image 3; Reference electrode only in bath) and when both the reference and recording electrodes are in the bath (Image 4; when both Reference and recording electrodes are immersed in bath)
.
I’m currently focused on endogenous currents of ligand-gated and voltage-gated ion channels using a whole-cell voltage clamp configuration.
Please help me figure out the problem, and I’m grateful for your kind responses.
Thank you very much.
Nirujan
I am wondering what tools people use to design these circuit layout schematics in 3D (as shown below).
I know illustrator can do some of this but what else is used for 3D designs of complex photonic/electronic circuits?
Figure References:
2. Bogaerts, W., Pérez, D., Capmany, J. et al.Programmable photonic circuits. Nature 586, 207–216 (2020). https://doi.org/10.1038/s41586-020-2764-0
I did EIS measurement for my electrocatalyst in both open circuit potential and at fixed potential of 1.5 V vs RHE. The Rct for OCP came much lower than the fixed potential. What could be the reason?
How to make a thermistor on a flexible circuit board to achieve temperature detection? What skills or equipment do I need?
my design is transformer based with one flying capacitor.
there is a circuit for capacitor balancing.
Please guide me about the readout circuit for resistive gas sensor
Clock skew in VLSI design refers to the variation in arrival times of clock signals at different parts of a chip. This can lead to timing issues and affect overall circuit performance. Understanding its impact and employing effective mitigation strategies is crucial for robust VLSI designs.
Seeking insights on minimizing overshoot and settling time.
The above experiment may be performed (approximated) at home.
It consists of wires bent as pictured, two crossbar "runners" ---wooden handles could be attached to these, and a large coil - a couple of hand-spans in diameter, connected to a D.C. supply.
The U-shaped wires, which share a common join, are placed at the centre, and in the plane of the coil, approximating a uniform, or at least symmetric magnetic field incident upon the circuit.
A voltmeter is connected across the middle crossbar.
If the left-hand crossbar "runner" is in motion, a voltage appears across the middle crossbar.
If the right-hand crossbar is in motion, a voltage appears across the middle crossbar --- perhaps a different one, depending on the speed of the "runner". (In the diagram, the right-hand crossbar is moving at half the rate of the left-hand crossbar.)
If both crossbars are in motion, the voltage drops to zero, and no induction takes place in either circuit.
Is this the case?
knowing that :
- the treatment will be done in a circuit
- the volume of pulp, cells and required yield are known?
In SCAPS-1D I am trying different combinations of HTLs, ETLs, and absorption layers. But for a lot of structure, I'm not getting Voc and FF. I tried to change thickness, affiniity, bandgap, and V2 but nothing worked yet.
Hi, I was using the Malvern Zetasizer to measure the zeta potential of GNPs in simulated cement pore solution. when I measure the zeta potential of GNPs in simulate cement pore solution, the software shows the message "Problem with cell drive circuit". In the SOPs, the materials is "Polystyrene latex", the dispersant is added manually with a dielectric constant of 5.2 (I checked in the literature, the dielectric constant is around 5.2 of simulated pore solution). But the zeta potential cannot be measured with this SOPs, and shows the message "Problem with cell drive circuit". The GNPs is conductive and the concentration is 0.02 g/L. Do you know how to measure the zeta potential of GNPs in simulated cement pore solution?
The simulated cement pore solution is saturated Ca(OH)2 with 8g/L NaOH, 22.4g/L KOH and 27.6 g/L CaSO4. PH is around 13.3
I would like to simulate a passive-quenching active-reset circuit for single-photon avalanche diodes (SPAD) for a project. Is there any SPAD model available online that I can import for the LTSpice? Any resources to help me get started would be highly appreciated.
equivalent circuit model of a cavity
I‘m currently trying to find a fit for my data but I‘m struggling with finding the correct equivalent circuit. I‘m working with a two-electrode-system and my electrolyte is my analyte.
I can’t use the randels circuit and I wondered, why it describes just the electrolyte, the double layer and one electrode.
In my understanding, the circuit (in the case of a two-electrode-system) should consist of the resistor and capacitor from my working electrode, the resistor from my electrolyte and again a capacitor and resistor for my counter electrode.
I‘m quite new to the topic, so if someone has an answer or idea it would be very helpful!
I know this resistor is to prevent the circuit from saturating (caused by offset voltage and input bias current). Who can tell me more details about this resistor?
Dear colleagues,
I am conducting an electrochemical impedance spectroscopy (EIS) analysis of a system using Metrohm Autolab. I need to fit a line to the Nyquist plot of the impedance data, but I encounter some difficulties. When I select three points on the plot, the line obtained from the equivalent circuit does not follow the curve closely, and the parameters of the circuit are not consistent with the expected values. How can I increase the accuracy of the line fitting and the circuit parameters? I have attached an example of the plot and the circuit for your reference.
Thank you for your help
During the parameter identification of an equivalent circuit model for an electrochemical impedance spectrum (EIS), some bad points in the EIS seriously disturb the identification accuracy. We usually manually pick out those bad points according to our instinct or experience. I think this is very subjective. Does Anyone know any objective method or publications that i can count on to pick out the bad points?
I read this article a few days ago when I started my fitting and was partly confused. This is because in the article they say that Chi-square and Chi-square/|Z|^2 are both parameters that indicate goodness of the fit.
In addition, at the start of the article, it is mentioned that lower the Chi-square, better the fit.
However, as we move to the latter parts of the article, specifically the complex equivalent circuit section, they compare the Chi-square/|Z|^2 between Figure 7 and 8 to judge the “goodness” of the fit and not X^2 (which as observed from Figures 7 & 8 is quite high).
This is the dilemma that I am in.
Which parameter is a better indicator of the fit Chi-sqaure/|Z|^2 or the Chi-sqaure and why? Are there specific conditions when one parameter is a better indicator than the other?
Kindly share your thoughts.
Currently my EIS fitting is yielding high Chi-square values (in order of e9-e12), however the Chi-square/|Z|^2 is around 0.01 (Similar to what is indicated in Figures 7&8 of the article).
#EIS #Corrosion #Coatings #EIS fitting #BioLogic #EC-lab
Greetings, is it correct to use richards transformation for equivalent circuit realization i.e. in reverse form for extracting L and C values. Else it is applicable only for realizing lowpass filter design alone.
I have measured voltage of one port RF device which was 53 vpp and return loss was -6.3 dB at frequency 7.3 MHz. Now I want to convert voltage into power in watt. So I think I should first get the impedance of circuit from the return loss value (considering characteristic CPW input impedance 50 omh) and then use normal power formula to get the power value in watt. Am I correct? If someone can help me, this would be really great.
Thanks
Shilpi
I have two different PEEC models of two different circuits, is there any way I can combine them into one model?
I want to do Open loop analysis of BLDC motor. While doing so, when I want to connect BLDC motor block with 3-phase inverter in Simulink, it don't let me to connect it. This is the desired circuit which I want to connect it with.
LiFePO4 as cathode, Li4Ti5O12 as anode,and celgard 2320 as separator, were assembled to the whole battery. I prepared 20 of them, and the open circuit voltages of them all are zero. Their electrochemical performance was shown as below. 18 of them behaves like fig.1, only two cells have the circles like fig.2 and 3.
How can I calculate Short circuit current density Jsc of a solar cell from EQE data?
I understood the theory and concept behind it but I'm not getting steps how to calculate Jsc from that EQE graph. I only have EQE data (plotted EQE graph with it in origin) and Jsc from I-V characteristics.
Can anyone help me with step by step process of this calculation in details ?
Thanks.
I've contemplated an idea, to implement PID controller as an electronic circuit, attached as an illustration here. This is only a raw idea. I know there should be some Earth branches, but I'm not an electronic engineer and do not have adequate practical auxiliary electronic circuit insight. So, please modify my idea if you see some mistakes. Is error signal e(t); in an embedded controller system, of voltage-type, or of electric-current type? Thank you.
i am trying to design oscillator using onchip inductor available in 45nm technology in Cadence virtuoso but i am not able to get sustain oscillation due to damping. can anyone tell me how to findout damping in the circuits such that we can design W/L ratio of cross coupled pair.
I have digitized single channel eeg signal from online database, I want to use the eeg signal to check my eeg acquisition circuit. i.e. I want to design a eeg simulator circuit that would create an analog output of the prerecorded signals fed to them. Could you suggest some papers or circuits that would be helpful.
Thanks in advance to all the members of the research community
recording cyclic voltammograms of X µ mol·L-1 of analyte in the *buffer pH 7 onto the working electrodes surface at open circuit conditions and following preconcentration by adsorptive accumulation at +0.2 V (versus Ag/AgCl/KCls) for 50 s.
Our laboratory has a PerkinElmer (model: AAnalyst 800) atomic absorption spectroscopy. Recently, the performance of the device has encountered a problem. When the circuit breaker of the device automatically turns off the air compressor, the flame also turns off, and a "No air pressure" error appears on the screen. Due to this issue, we are unable to use the device.
It should be noted that the air compressor has been checked and there is no problem associated with it.
If you can help with your guidance, it will undoubtedly be a great favor to many of our students who are having trouble doing their dissertation tests.
Power system strength is very important for system planning and protection design. There is one metric "SCR or short circuit ratio" generally mentioned to define the system strength. I have confusion about the definition of this index. Some texts define it as the ratio between short-circuit MVA and rated MVA and some define it in reference to the inverter based resources as the ratio between short-circuit MVA and rated MW of inverter based power source. Few references are attached.
Kindly clarify.
Shape is strange and I may not able to explain this with an equivalent circuit. So, please some one can help me to explain with proper electrochemistry?
This results came for Supercapacitor measurements
I have repeat this and I continuously got this shape, ensure it wasn't mistake
IC will have an equivalent circuit, however microprocessor and microcontroller working through data logics and instructions? How it works internally with VLSI design circuit?
R(Q(R(C(R(RW)))))(CR).
For a three electrode system viz. working, counter and reference. please explain these parameters.
photonics integrated circuits (PIC) theories and practices are very highly recommended in P.R.China right now. Can someone kindly raise some courses, materials and other stuff related to the subject?
Thanks.
I am a beginner in this field and have read from papers that a stable baseline current has to be obtained, the MFC should start its operation in an open circuit potential (OCP) etc. How do I check for OCP?
kindly Explain to me what are Rp value and Rct of the 3 RC circuits eg. Rs(R1C1)(R2C2)(R3C3)?
Do anyone know about the role of sensory circuiting and does it play significant part in individuals with Hyperactivity? Any supporting material?
How temperature of source and sample affects electrical conductivity? Which formulas are best fitted to determine the electrical conductivity, resistance, impedance etc. for solid food?
I have been working with ngSpice circuit simulator for a couple of months now and have had to give up because of bad (noisy and glitchy) simulation results. I don't feel like I can trust any of the results I have gotten. I finally attributed this to floating point roundoff errors. My circuit has atto amp to milli amp currents. This wide range is probably what is causing the errors. The best any PC can do is 64 bit floats. In order to prove that my problem is floating point roundoff I am trying to find a site where I can run a Spice simulation that can handle 128 bit floats. Does anyone know of such a site?
Dear Researchers,
What are the different methods to calculate each parameters in AC conductivity and DC conductivity. Which method is the best method to find resistance and conductivity of thin film. Can we calculate capacitance, impedance, dielectric constants of thin film by the same method of designing circuits.
Generation of noise is an essential part to ensure the noise tolerance in the circuits.
Hello All, I simulated a resonator in comsol and I use electromechanical physics. I need displacement in result and I want cir physics at the same time to add resistance. Is it possible?
Can you please help derive an equation for Rau with respect to the other parameters from this circuit? Thanks a lot!
I've designed a metamaterial based Substrate Integrated Waveguide Antenna in HFSS at 28 GHz. Is it necessary to make it's equivalent circuit in ADS or can I just simply add the source as the antenna and start with the fabrication process?
Whether it should be with respect to E (reference) or E (open circuit) ? And what is the potential value we need to put? Whether we should consider the onset potential from LSV or at 0V?
I'm deigning a rectifier for a rectenna at an operating frequency of 28 GHz. I used High Frequency HSMS-2860 diode for the circuit but it didn't resonate at 28 GHz although I did the matching properly using the Smith Chart. Now I want to design the same circuit using the above-mentioned MACOM diode. Can anybody help me out with this?
I am looking for a FAB that can make InP based photonic integrated circuits based on provided custom design, please help me to find one?
Somewhere in china or asian countries will be better
I fabricated FTO/TiO2/Sb2S3/P3HT/CE solar cell. The counter electrodes I used were Ag and carbon. I used a 0.2 cm2 mask to get the efficiency reading since CE area in every solar cell was not equal in all my solar cells. The CE was fabricated approx. 1 cm2 area in the solar cell. When I measured efficiency in an unmasked solar cell (cell area was roughly measured from the vernier caliper), the open circuit voltage was 0.3 V. When using the mask, open circuit voltage was 0.1 V. Have anyone observed this variation? Could you give me the reason for that? As I understood, the reasons might be
1)the layers were not uniform
2)the generated carriers under sunlight could diffuse all over the layer (the area covered by the mask). Could this reduce by fabricating CE with a low area?
3)cell area effect to the resistance of the solar cell. Could this reduce by fabricating CE with a low area?