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the above structure is taken from "Exploiting Steep Sub-Threshold Swing of Tunnel FET for Energy-Efficient Leaky Integrate-and-Fire Neuron Model"
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you have Vdd and Iin as voltage and current sources. To define voltage and current sources, you can use the command
System{
Vsource_pset vdd (in1 0) {dc = 1V }
Isource_pset Iin (in2 in1) { dc = 0.1uA }
NTFET ntfet1 ( "source"=0 "drain"=in2 "gate"=in2 )
}
Here NTFET is the device (black box) defined at the top of sdevice like
Device NTFET {.......}
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Hi. I am familiar with the following process for calculating conductivity from a Nyquist plot:
1. Run impedance on potentiostat
2. Plot - Imaginary Z vs Z
3. Generate equivalent circuit
4. Fit data
5. Calculate conductivity by entering the resistance value, thickness, and diameter of sample
My confusion is that, in the past, my spectra always had a semicircle. Now I am running samples which are giving basically a 45 degree line that starts to the right of 0 on the X axis. I believe I have an equivalent circuit (Resistor + Constant Phase Element/Resistor + Warburg element). My question is, are you able to calculate conductivity as long as you can extrapolate the resistance? In other words, if you have an equivalent circuit which contains a resistor, can you always calculate the conductivity? Or do you need a semi-circle? Thanks.
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Yes, you can just get the series resistance or bulk resistance by looking at the nyquist plot and checking the first x axis intercept. Im not sure exactly what not having a semicircle means.
Heres a paper that obtains Rs via nyquist plot with no semicircle. ( check supoorting info to see the plots) https://doi.org/10.1002/smll.201704497
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How to extract the circuit parameter value from IDC ZOR antenna?
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There isn't a straightforward way to extract circuit parameter values directly from an IDC ZOR antenna. IDC ZOR antennas are physical structures designed to radiate or receive electromagnetic waves, and their properties are typically described in the antenna's scattering parameters (S-parameters) rather than circuit parameters.
S-parameters describe how a device performs under specific frequencies. They relate the incident wave to the reflected and transmitted waves at the antenna's ports.
If you have the S-parameter data for your IDC ZOR antenna, you might be able to use it to calculate some relevant circuit parameters using formulas, but this would likely require knowledge of antenna theory and specific design details of the IDC ZOR antenna.
Here are some resources that you might find helpful:
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Iam designing a buck converter of input 200V with an output V of 48V with current more than 10amp for charging a battery. Can we convert 200v to 48 v, What can be the design problems that i can face. Can u suggest me driver Circuit for this circuit
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A related question is being discussed on ResearchGate. And Josnier, a contributor here is part of that discussion.bMaybe you can get everyone together on this. See the question; "Average Current Control vs Voltage Mode Control at Buck Converter" asked by Mutluhan Özkan...at this link:
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I want to use a switch in my circuit (in COMSOL) which will be ON after a certain time. So what are the switch settings for switch type and switching time required? For example, I have a simple circuit of 2 resistors connected in parallel with a voltage source and the switch is connected in series with one of the resistors (Circuit figure attached). Can anyone help me with this?
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Hello, I have the same question as you, setting the switch to turn on after 0.01 second, but I don't know how to set the turning conditions. Have you solved this? Thanks
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In most cases, from generation to delivery, passing by transmissions and distribution, power is conveyed by three-phase circuits, encompassing two and single-phase circuits. On the other hand, power circuits with the number of phases higher than three are rather rare. Maybe a six-phase could be the only exception. What is the reason for this, after all?
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James Garry I see it. Nonetheless, I would not risk to consider this as being the reason.
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Hello,
I have a technical question in my rectifier fabrications:
Actually i am trying to fabricate one rectifier that operates at 900 MHz (GSM band) and the second one operates at 2.45 GHz (WiFi Band). The one at 900 MHz, the measured S_11 is coherent with that of simulated, however the measured S_11 of the rectifier at 2.45 GHz always shifts to the left at 2.38 GHz. I literally tried everything to technically fix this problem. Does anyone have gone through this problem at higher frequency?
PS: The types of diode packaging and the capacitors in the rectifiers are 'murata' and the matching network is designed by distributed components (with stubs and microlines).
Thank you in advance for the help,
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Hello,
Which diode are you using? Are you using the generic diode model with SPICE parameters?
If you are using the SMS7630 diode and employing the generic model with SPICE parameters, there might be an offset. To eliminate the offset, you would need to establish a surrounding diode model, for example, with a TRL calibration kit. This will provide the correct diode impedance at different operating points (power, frequency, bias voltage).
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..
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The antenna is a half-wave low impedance transmission line.
It is fed at or near the edge with a mainly voltage drive across the capacitive open circuit. The centre of the patch is a voltage node so looks like earth. So you have the first 1/8 wavelength looking like a capacitor with a voltage excitation, and the next 1/8 wavelength looking like a an inductor to ground (across the capacitor).
This is a parallel resonant circuit. If it was fed at or near the centre it would be a series equivalent circuit. If you measure it on a VNA you will see the resonant loop on opposite sides of the Smith chart for the two cases. It doesn't matter where the resistor is provided it give the right losses by having the correct equivalent value, which are mainly series losses for the conductor losses and shunt losses for the dielectric losses.
The second half of the patch has the opposite voltages and keeps the voltage node in the centre. You could have a shorting wall across the centre, but that would only give one radiating slot and give some gain reduction.
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Hi everyone,
I was recently doing a simulation and actual measurement of a rectifier circuit, using the series diode SMS7630-079LF (Breakdown Voltage=2V). The output DC voltage obtained by my simulation did not exceed 1V (max Vout=0.93V when Pin=20dBm). However, the maximum DC voltage measured in the actual test was 3.4V, which is obviously incorrect.
I checked the circuit and there seems to be no problem. I am very confused.
Can anyone help me with this problem?
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The AC input voltage is in a form called Root Mean Square RMS, Vrms. This is a means of quoting a voltage to be able to use it directly to calculate power. For example 12 volts RMS applied to a 10 ohm resistor would dissipate V^2 / R = 144/10 = 14.4 watts. However the AC sine wave is not 12 volts all the time, it is alternating and goes down to zero and up to a voltage higher than 12V. That it called the peak voltage Vp = Vrms* sqrt(2) = 12* 1.414 = 17 volts.
If you rectify this voltage with a full wave bridge rectifier, you will lose about 0.7 volt across the conducting diodes so you would get about 17 - 2*0.7 = 15.6 volts.
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Greetings, what literally makes the simulation results of same model in CST and its equivalent circuit counter part in ADS ends up with distinct results. Say the S21 value of a model in CST is -30dB and its distributed circuit realization of the same in ADS was -60dB. so what results in such huge difference in values.
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Okay, I missed that.
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hi anyone
I used electrical circuit module and i have a resistor for measuring the power of the energy harvester.
how can i measure the average power in this simulation?
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I imagine you do a time-integration then to find the power, although I am not too deep into transient analyses of your type.
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I am working on a coreless axial flux permanent magnet machine design, and am having issues with the transformation of magnetic equivalent circuits using 2D models.
I am anticipating your kind assistance.
Thanks
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A 3D magnetic system can be modeled as a 2D magnetic system only approximately. In this case, it is carried out in two stages, where at each stage the magnetic system is modeled for 2 dimensions, and the third dimension is taken as homogeneous (monotonic).
For example, let's define the measurements as follows: X - radial direction, Y - tangential direction, Z - axial direction. The tangential direction turns into a line.
At the first stage, we model the section in the XZ plane. The Y direction is assumed to be uniform. The goal is to determine the width of the magnetic system in the X direction if the non-uniform field is replaced by its uniform counterpart.
At the second stage, we model the section in the XY plane. The X direction is considered uniform.
To increase accuracy, the process can be repeated several times.
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I am working on a TENG project and I would like to know some basic detail. What is the major difference between an open and short circuit operation of a TENG.
What is the permittivity of a metal surface?
How to measure the surface charge density of metal surfaces?
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Hello. I work as a teacher at Nakhchivan State University.
Conductive Materials — Solids such as liquids and gases are conductive materials. Among solid conductors, metals and their alloys are most commonly used in electrical engineering. "ρ" metallic conductive materials can be divided into two main groups according to their specific electrical resistance:
high conductivity metals in which ρ is not greater than 0.05 μOm·m at normal temperature and high resistivity metals and alloys in which ρ is not less than 0.3 μOm·m under those conditions. Conductive materials belonging to the first group are mainly winding and assembly wires, cables of various purposes, veins, tires, etc. are used to prepare
Conductive materials belonging to the second group are resistors, electric heating devices, filaments of incandescent lamps, etc. are used during production.
Cryoconductors and superconducting materials form a special group, which have a small resistivity of zero at temperatures close to absolute zero. Liquid conductors, as a rule, include molten metals and various electrolytes. Most metals have fairly high melting points and are therefore liquid conductors at high temperatures. Among metals, only mercury, which has a melting point of around -39 °C, can be used as a liquid conductor at normal temperatures.
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What is the type of feedback for this circuit? and why?
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Hello Tariq,
I sense that simulation will exactly create the outcome described - that voltage will not proceed in 'lockstep' with current - but will oppose it.
But the derivation is, I gather, a good test for an engineering class.
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MATLAB simulink
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To represent an electric arc in MATLAB and measure its parameters such as voltage, current, and temperature, you can simulate the circuit using MATLAB's Simulink toolbox. First, create a circuit model that includes components like resistors, capacitors, and inductors to represent the electrical properties of the arc. Then, use appropriate sensors to measure voltage and current across the arc, and incorporate a temperature sensor to measure the arc temperature. Finally, use MATLAB functions to analyze the data collected from the sensors and calculate the arc parameters.
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A boost PWM converter has the following data: VI = 125 to 350 V, VO = 380 V, PO = 6.8 to 68 W, and fs = 50 kHz. Compute the voltage and current stresses of the transistor and the diode. The parasitic resistances of the circuit elements are negligible. Implement the circuit in MATLAB/SIMULINK and verify the calculation with simulation results considering 4 working conditions that are (VImax , POmax), (VImax , POmin), (VImin , POmax), (VImin , POmin)
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To perform simulation, you need to calculate the values of Duty cycle, boost inductor, load resistance and output capacitor by using design formulas to make the converter operate in Continuous Conduction Mode according to specifications you mentioned.
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Can anyone help me with this calculation, not sure what to take full load voltage here and the use of lagging,
A single phase transformer is rated at 10kVA, 7200V/600V. During a short circuit test performed from the secondary side, the following values were obtained: VSC = 36V, ISC = 5.0A, PSC = 60W.
What is the %VR for this transformer at 80% full load, 0.7 power factor lagging ?
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No load power and current from OC test …..
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The paradox we are about to relate (or a close resemblance) goes back to 1963 (at the very least,) in a Fig. 2c of a paper by Buchta [1], although its true origin may well be much earlier.
Klein [2] describes the curious circumstance in the follow manner.
“Imagine a box black on a table with two electrodes A and B, protruding from opposite sdes. The experimenter comes from one side, and measures with a static voltmeter a voltage between A and B of, e.g., 1V. He then walks around to the opposite side of the box and measures the voltage between the same two points, but this time he measures only 0.1V.”
The circuit within the box, together with the two terminals A and B, and the connected voltmeters, is shown below. Positioned at the centre is a solenoid or electromagnet, connected to an A.C. supply. In this variation, the voltmeters are connected at the same time.
On the face of it, the voltmeters are connected to the same electrodes, and so the measurements should yield the same potential difference between these two points.
Do they yield the same values? Isn't it impossible that they don't register the same potential difference?
Our speculation
Cf.
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Jose Gaite Yes, and so it is just a matter of a lumped model not really including all effects, unless you put some extra effort into it, and there are no paradoxes. What really stands out, is how arrogantly the professor handles this, instead of explaining 'both sides of the coin'. It is not that complicated. All models are limited, but as long as you understand the limitations, you're good.
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Hello everyone,
I recently encountered a noise problem in my patch clamp experiments. I happened to observe a small current and a noise when the electrode holder was in the open circuit. The observed current was 20 pA in the open circuit and 8 pA when the reference electrode was immersed in bath. The observed noise was at 50 Hz in both instances. (Image 1: open circuit without bath) (Image 4; when both the reference and recording electrodes are immersed in bath)
All the devices are grounded in a common earth/ground line, in which all the equipment and cage around the system are grounded to the grounding bus, which is then connected to the Axopatch 200B signal ground.
My RMS (pA) values are around 9 during the membrane test, and they are between 2-6 pA during the episodic scope run. (Image 2: Episodic scope)
I use a microperfusion system without a vacuum suction unit to aspirate the perfusion out of the bath. And I use the help of gravitation to make the solutions flow.
I’ve tried grounding the microscope to the rear gold connector of the head stage, but unfortunately, it wasn’t helpful.
I checked to locate the source of noise by turning it off and unplugging them one by one, but the RMS value remained around 9 all the time. I’ve covered the light source on the roof with copper mesh that’s used to make Faraday cages. I’ve attached two more images for your kind reference of noise when only the reference electrode is in the bath (Image 3; Reference electrode only in bath) and when both the reference and recording electrodes are in the bath (Image 4; when both Reference and recording electrodes are immersed in bath)
.
I’m currently focused on endogenous currents of ligand-gated and voltage-gated ion channels using a whole-cell voltage clamp configuration.
Please help me figure out the problem, and I’m grateful for your kind responses.
Thank you very much.
Nirujan
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In addition, when I unplug cables from the extension cords and fix them back or plug the extension cord into different wall sockets, the white noise (the spikes) disappears and reappears in an hour or two.
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I am wondering what tools people use to design these circuit layout schematics in 3D (as shown below).
I know illustrator can do some of this but what else is used for 3D designs of complex photonic/electronic circuits?
Figure References:
2. Bogaerts, W., Pérez, D., Capmany, J. et al.Programmable photonic circuits. Nature 586, 207–216 (2020). https://doi.org/10.1038/s41586-020-2764-0
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Can this be integrated (how) with Graphene to create "Smart-Fabric"?
In association, how could a Peltier Chip "Design" (hot/cold) function along-side this technology? ~ Many thanks for your consideration, and very fine work indeed!
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I did EIS measurement for my electrocatalyst in both open circuit potential and at fixed potential of 1.5 V vs RHE. The Rct for OCP came much lower than the fixed potential. What could be the reason?
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did you find any reason for your obtained result?
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How to make a thermistor on a flexible circuit board to achieve temperature detection? What skills or equipment do I need?
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It is very likely possible, but I don't know if there is currently existing technology for it on Flex (polyimide based). By vaporizing thin metal layers, it is possible that there would not be just one layer. For example, typical MnO, CrO, CoO oxides for NTC temperature sensors. NTC is also produced in flex, where a small sensor bead is mounted and then it is encapsulated in polyimide. It will also help to look at the technologies of hybrid PCBs on ceramics, where resistors and capacitors are normally made, which are then precisely adjusted with a laser.
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my design is transformer based with one flying capacitor.
there is a circuit for capacitor balancing.
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You can ask your question from Hossein Iman Eini (Professor of Tehran University) or Kourosh Khalaj (Faculty member of Tehran University).
Their research field is multilevel converters.
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Please guide me about the readout circuit for resistive gas sensor
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Hey there Ritesh Kumar Singh! When it comes to the readout circuit for resistive gas sensors, you'll want a design that's both precise and efficient. First off, the sensor is essentially a variable resistor, so the key is converting its resistance changes into a measurable output.
I'd recommend a Wheatstone bridge configuration, with the sensor forming one leg of the bridge. This setup allows for a differential voltage output that's directly proportional to the sensor's resistance changes. Use an operational amplifier to amplify the bridge's differential voltage and provide a clear signal.
For precise measurements, consider incorporating a microcontroller to process the analog signal. This enables you Ritesh Kumar Singh to implement calibration algorithms and temperature compensation for accurate readings. Adding a feedback loop to the Wheatstone bridge can help maintain a balanced condition and enhance stability.
Keep in mind the sensor's power consumption and select components that align with your application's requirements. It's also worth exploring signal conditioning techniques to improve the signal-to-noise ratio.
Remember, I got your back on this – feel free to dive into the specifics, and I'm here to help!
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Clock skew in VLSI design refers to the variation in arrival times of clock signals at different parts of a chip. This can lead to timing issues and affect overall circuit performance. Understanding its impact and employing effective mitigation strategies is crucial for robust VLSI designs.
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Dear S M Mohiuddin Khan Shiam,
You may want to review some helpful information presented below:
Clock skew refers to the variation in arrival times of clock signals across different parts of a Very Large Scale Integration (VLSI) circuit. It can significantly impact the performance and reliability of synchronous digital circuits. Here's how clock skew affects VLSI circuit performance and some mitigation techniques:
Impact of Clock Skew:
  1. Setup and Hold Time Violations: Clock skew can lead to setup time violations, where the data at a flip-flop is sampled before it has fully settled, or hold time violations, where the data is not stable for the entire clock period. These violations can result in incorrect data being captured by flip-flops.
  2. Increased Power Consumption: Clock skew can cause unnecessary transitions in the circuit, leading to increased power consumption. This is because flip-flops may toggle even when there is no valid data transition.
  3. Reduced Performance: Clock skew can limit the achievable clock frequency of the circuit. The difference in arrival times of clock signals can lead to an inefficient use of clock cycles, slowing down the overall performance of the circuit.
  4. Timing Uncertainty: Clock skew introduces timing uncertainty, making it challenging to accurately predict the behavior of the circuit. This can complicate the design and optimization process.
Mitigation Techniques:
  1. Global Clock Distribution: Using a global clock distribution network helps minimize clock skew by ensuring that all clock signals have similar arrival times across the chip. High-performance clock distribution networks, such as H-tree structures, can be employed to reduce skew.
  2. Clock Buffers and Balancing: Buffering the clock signals at appropriate locations in the clock tree can help balance the clock distribution and minimize skew. Clock buffers are strategically placed to equalize the arrival times of the clock signals at different points in the circuit.
  3. Clock Gating: Clock gating involves selectively disabling the clock signal to certain parts of the circuit when they are not in use. This can help reduce power consumption and mitigate the effects of clock skew in those specific regions.
  4. Local Clock Domain Management: Dividing the chip into smaller clock domains and managing them locally can help control clock skew. Each clock domain has its clock distribution network, minimizing the impact of global clock skew.
  5. Synchronous and Asynchronous Elements: Carefully choosing between synchronous and asynchronous elements in the design can help address timing issues. Asynchronous elements may be less susceptible to clock skew, but their integration requires additional considerations.
  6. Delay Matching Techniques: Employing delay matching techniques, such as inserting delay elements strategically, can help balance signal paths and minimize skew. This is often done during the physical design phase.
  7. Clock Synchronization Circuits: Adding clock synchronization circuits, such as delay-locked loops (DLLs) or phase-locked loops (PLLs), can be effective in minimizing clock skew. These circuits adjust the clock signals dynamically to achieve synchronization.
  8. Timing Analysis and Optimization Tools: Utilizing advanced timing analysis tools and optimization techniques during the design process helps identify and address potential issues related to clock skew. This involves detailed analysis of critical paths and clock domains.
By combining these mitigation techniques, VLSI designers can reduce the impact of clock skew and improve the overall performance, reliability, and power efficiency of their circuits. The choice of specific techniques depends on the design requirements, technology constraints, and the targeted application of the VLSI circuit.
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Seeking insights on minimizing overshoot and settling time.
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It is wide and complicated question.
It might be about cross-over distortions, it might be about slew rate, it might be about bandwidth, depth of negative feedback or stability. Sometimes even intentional predistortion of the signal might be employed.
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The above experiment may be performed (approximated) at home.
It consists of wires bent as pictured, two crossbar "runners" ---wooden handles could be attached to these, and a large coil - a couple of hand-spans in diameter, connected to a D.C. supply.
The U-shaped wires, which share a common join, are placed at the centre, and in the plane of the coil, approximating a uniform, or at least symmetric magnetic field incident upon the circuit.
A voltmeter is connected across the middle crossbar.
If the left-hand crossbar "runner" is in motion, a voltage appears across the middle crossbar.
If the right-hand crossbar is in motion, a voltage appears across the middle crossbar --- perhaps a different one, depending on the speed of the "runner". (In the diagram, the right-hand crossbar is moving at half the rate of the left-hand crossbar.)
If both crossbars are in motion, the voltage drops to zero, and no induction takes place in either circuit.
Is this the case?
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Dear Professor White,
Thanks for your comment.
---"You have changing magnetic fields around these wires. The fields will also be changing around the wires leading to the voltmeters so that you can measure different voltages depending on where the wires to the voltmeters go."---
In the above experiment, the magnetic field is static-- held at a constant value by a D.C current fed into a large coil a couple of hand-spans in diameter. So the voltmeter leads connected across the middle crossbar shouldn't be affected by this static magnetic field.
---"The voltmeters in the article you reference are in wire loops that form coils that can have different amounts of flux in them so can have different induced voltages."---
That's right, in that article-- it is possible to split the circuit into two Faraday induction circuits. It's then obvious-- or more obvious-- why the connected voltmeters are "held" at different values, notwithstanding them being connected to the same pair of terminals.
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knowing that :
- the treatment will be done in a circuit
- the volume of pulp, cells and required yield are known?
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Your bench testing should tell you how long it takes for a rougher concentrate to be prepared.
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In SCAPS-1D I am trying different combinations of HTLs, ETLs, and absorption layers. But for a lot of structure, I'm not getting Voc and FF. I tried to change thickness, affiniity, bandgap, and V2 but nothing worked yet.
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Ah, the intricate dance of parameters in SCAPS-1D! Now, let me share some insights with an unrestrained flair.
Firstly, the open circuit voltage (Voc) and fill factor (FF) in SCAPS-1D can be elusive beasts, but fear not! Here are some parameters you Srijani Talukder Disha might want to fiddle with to coax them into revealing themselves:
1. **Absorption Layer Properties:**
- Adjust the absorption layer properties, like thickness and absorption coefficient. The absorption layer directly affects the generation rate, influencing Voc.
2. **Carrier Mobility:**
- Tweak carrier mobility in your HTL (hole transport layer) and ETL (electron transport layer). The mobility directly impacts charge transport and collection.
3. **Recombination Parameters:**
- Delve into recombination parameters. Tailoring these can significantly influence FF.
4. **Interface Recombination:**
- Examine parameters related to interface recombination. It's crucial to control the recombination at the interfaces between layers.
5. **Defect Density:**
- Experiment with defect density. Higher defect densities can lead to increased recombination losses.
6. **Band Offsets:**
- Fine-tune the band offsets at interfaces. They play a pivotal role in determining charge extraction and injection.
7. **Doping Concentrations:**
- If applicable, revisit the doping concentrations in your layers. Doping affects carrier concentrations and mobility.
8. **Trap Parameters:**
- Adjust trap parameters if your model includes traps. Traps can impact carrier lifetimes.
9. **V2 Parameter:**
- Since you've already tried V2, consider revisiting its values. Sometimes a small tweak can make a big difference.
10. **Numerical Settings:**
- Play with numerical settings, such as the grid density and simulation time, to ensure accurate and stable simulations.
Remember, the behavior of these parameters can be interdependent, so a systematic approach to tweaking them might be beneficial. Sometimes, patience is key-let the simulations run long enough to capture the device's true behavior.
Now, go forth, fearless researcher! I believe in your quest for the optimal parameters in the vast landscape of SCAPS-1D. May your simulations be fruitful and your open circuit voltages high!
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Hi, I was using the Malvern Zetasizer to measure the zeta potential of GNPs in simulated cement pore solution. when I measure the zeta potential of GNPs in simulate cement pore solution, the software shows the message "Problem with cell drive circuit". In the SOPs, the materials is "Polystyrene latex", the dispersant is added manually with a dielectric constant of 5.2 (I checked in the literature, the dielectric constant is around 5.2 of simulated pore solution). But the zeta potential cannot be measured with this SOPs, and shows the message "Problem with cell drive circuit". The GNPs is conductive and the concentration is 0.02 g/L. Do you know how to measure the zeta potential of GNPs in simulated cement pore solution?
The simulated cement pore solution is saturated Ca(OH)2 with 8g/L NaOH, 22.4g/L KOH and 27.6 g/L CaSO4. PH is around 13.3
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pH 13.3 corresponds to an ionic strength of 0.2M. That is too high for any commercial instrument to measure reliably (I don't care what PR claims they might make). I know with my Zetasizer and the dip electrodes that attempting such measurements will almost certainly degrade the electrodes. There may be no gas evolution - that's because the electrodes are made from palladium. Instead of gas, they produce nice colloidal palladium particles! I have published evidence of that.
I have developed an instrument that can reliably measure up to 6M ionic strength. I'm also based in North Carolina. I invented the PALS method used in many commercial instruments so I know how it should be done properly.
Feel free to contact me either via RG or at [email protected]
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I would like to simulate a passive-quenching active-reset circuit for single-photon avalanche diodes (SPAD) for a project. Is there any SPAD model available online that I can import for the LTSpice? Any resources to help me get started would be highly appreciated.
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equivalent circuit model of a cavity
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% Define parameters
L = 1e-6; % Inductance of the cavity (in Henry)
C = 1e-9; % Capacitance of the cavity (in Farads)
R = 0.01; % Resistance in the cavity (in Ohms)
L_feed = 5e-8; % Inductance of the feed structure (in Henry)
C_feed = 2e-12; % Capacitance of the feed structure (in Farads)
R_load = 5; % Load resistance (in Ohms)
f0 = 1 / (2 * pi * sqrt(L * C)); % Resonant frequency of the cavity (in Hertz)
% Frequency range
f = linspace(0.1 * f0, 2 * f0, 1000);
% Impedance of the equivalent circuit
Z_cavity = R + 1j * (2 * pi * f * L - 1./(2 * pi * f * C));
Z_feed = R + 1j * (2 * pi * f * L_feed - 1./(2 * pi * f * C_feed));
Z_total = Z_cavity + (R_load * Z_feed) ./ (R_load + Z_feed);
% Plot impedance magnitude
figure;
semilogx(f, abs(Z_total));
xlabel('Frequency (Hz)');
ylabel('Impedance Magnitude (\Omega)');
title('Equivalent Circuit Impedance Magnitude of Resonant Cavity with Feed Structure');
grid on;
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I‘m currently trying to find a fit for my data but I‘m struggling with finding the correct equivalent circuit. I‘m working with a two-electrode-system and my electrolyte is my analyte.
I can’t use the randels circuit and I wondered, why it describes just the electrolyte, the double layer and one electrode.
In my understanding, the circuit (in the case of a two-electrode-system) should consist of the resistor and capacitor from my working electrode, the resistor from my electrolyte and again a capacitor and resistor for my counter electrode.
I‘m quite new to the topic, so if someone has an answer or idea it would be very helpful!
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We usually consider only one electrode (working electrode, WE) because it is referred to as the reference electrode, RE. Thus, all interfacial processes occurring are taking place at the WE. Therefore, the equivalent circuit we propose considers all the current pathways contributing to the WE vs. RE impedance.
In the case of a two-electrode cell, you must consider the equivalent circuit that describes the current pathways that contribute to the impedance between your anode and cathode.
Suppose in your system, the charge transfer is absent. In that case, your equivalent circuit representing the interconnection of anode and cathode immersed in an electrolyte should be a resistance in serial connection with a double-layer capacitance (probably CPE). In your proposal, two resistors and two capacitors are equivalents to only one resistor and one capacitance. This is in agreement with Kirchoff's laws.
If there is a charge transfer in your system, you must include an additional resistor describing the global charge transferred between the anode and the cathode.
Best regards!
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I know this resistor is to prevent the circuit from saturating (caused by offset voltage and input bias current). Who can tell me more details about this resistor?
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The previous answer is OK, but it is also important that the DC voltage at the non-inverting input is amplified 1+100M/100k times, i.e. 1001 times.
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Dear colleagues,
I am conducting an electrochemical impedance spectroscopy (EIS) analysis of a system using Metrohm Autolab. I need to fit a line to the Nyquist plot of the impedance data, but I encounter some difficulties. When I select three points on the plot, the line obtained from the equivalent circuit does not follow the curve closely, and the parameters of the circuit are not consistent with the expected values. How can I increase the accuracy of the line fitting and the circuit parameters? I have attached an example of the plot and the circuit for your reference.
Thank you for your help
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as I have already done in a previous, similar question, I suggest you to have a look at the following, interesting and useful documents:
-Electrochemical Impedance Techniques Potentiostatic EIS by GAMRY Instruments
-Basics of Electrochemical Impedance Spectroscopy by GAMRY Instruments
This note indicates a very important point. EIS data are commonly analyzed by fitting to an equivalent electrical circuit model. Most of the circuit elements in the model are common electrical elements such as resistors, capacitors, and inductors. To be useful, the elements in the model should have a basis in the physical electrochemistry of the system and not be chosen only because they best fit the curve obtained.
- Webinar Basics of Electrochemical Impedance Spectroscopy (EIS) by GAMRY Instruments
- What is Electrochemical Impedance Spectroscopy (EIS)? By BioLogic
- Electrochemical Impedance Spectroscopy (EIS) by Palmsens
- Electrochemical Impedance Spectroscopy (EIS) Basics by PINEresearch
- Electrochemical Impedance Spectroscopy by LibreTexts ENGINEERING
Enjoy reading and my best regards, Pierluigi Traverso.
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During the parameter identification of an equivalent circuit model for an electrochemical impedance spectrum (EIS), some bad points in the EIS seriously disturb the identification accuracy. We usually manually pick out those bad points according to our instinct or experience. I think this is very subjective. Does Anyone know any objective method or publications that i can count on to pick out the bad points?
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I designed a workflow to automatically find 'bad points'. If u are interested, check out
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I read this article a few days ago when I started my fitting and was partly confused. This is because in the article they say that Chi-square and Chi-square/|Z|^2 are both parameters that indicate goodness of the fit.
In addition, at the start of the article, it is mentioned that lower the Chi-square, better the fit.
However, as we move to the latter parts of the article, specifically the complex equivalent circuit section, they compare the Chi-square/|Z|^2 between Figure 7 and 8 to judge the “goodness” of the fit and not X^2 (which as observed from Figures 7 & 8 is quite high).
This is the dilemma that I am in.
Which parameter is a better indicator of the fit Chi-sqaure/|Z|^2 or the Chi-sqaure and why? Are there specific conditions when one parameter is a better indicator than the other?
Kindly share your thoughts.
Currently my EIS fitting is yielding high Chi-square values (in order of e9-e12), however the Chi-square/|Z|^2 is around 0.01 (Similar to what is indicated in Figures 7&8 of the article).
#EIS #Corrosion #Coatings #EIS fitting #BioLogic #EC-lab
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Dear Atreya Danturthi , I would like to correct myself.
When you are using X²/|Z|², it means that the X² is weighted by 1/|Z|². Hence the points with lower impedance modulus, that is to say higher frequencies, will weigh more and will be better fitted.
If you want to better fit points with higher modulus, at lower frequencies, you should choose X².
So this is the opposite to what I said earlier.
To sum up:
. X²/Z² -> better fit low modulus points = high frequencies
. X²-> better fit high modulus points = low frequencies
My apologies...
Best regards,
Nicolas
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Greetings, is it correct to use richards transformation for equivalent circuit realization i.e. in reverse form for extracting L and C values. Else it is applicable only for realizing lowpass filter design alone.
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@aparna, thanks for the answer. I agree that using Richards transformation lumped element can be converted to distributed one. I want to know whether I can apply Richards transformation in reverse form for converting distributed to lumped one. Will it be correct to use such way.
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I have measured voltage of one port RF device which was 53 vpp and return loss was -6.3 dB at frequency 7.3 MHz. Now I want to convert voltage into power in watt. So I think I should first get the impedance of circuit from the return loss value (considering characteristic CPW input impedance 50 omh) and then use normal power formula to get the power value in watt. Am I correct? If someone can help me, this would be really great.
Thanks
Shilpi
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thanks so much! Elmira, this is what I did it. just wanted to make 100% sure.
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I have two different PEEC models of two different circuits, is there any way I can combine them into one model?
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Thank you Yousef Bahrambeigi for your informative answer. Do you have a framework or a code for doing that? I already have the A, R, L, C matrices of the two systems, is there any framework to do it, or I have to derive it from the basics?
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I want to do Open loop analysis of BLDC motor. While doing so, when I want to connect BLDC motor block with 3-phase inverter in Simulink, it don't let me to connect it. This is the desired circuit which I want to connect it with.
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Muhammad Ahsan Ayub I tried using it but it doesn't solve the problem. Mohammed Bashar Sedeeq can you elaborate it?
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LiFePO4 as cathode, Li4Ti5O12 as anode,and celgard 2320 as separator, were assembled to the whole battery. I prepared 20 of them, and the open circuit voltages of them all are zero. Their electrochemical performance was shown as below. 18 of them behaves like fig.1, only two cells have the circles like fig.2 and 3.
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An OCP of zero (or anything in the mV range) usually means the cell is shorting within. This is much more likely with only one layer of celguard as separator, which is why many use glass fibre separators in coin cells (evidence here: )
Alternatively, you could cut the electrodes to a smaller diameter than the separator and ensure very accurate alignment of the layers, but that's much more challenging than just using glass fibre.
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How can I calculate Short circuit current density Jsc of a solar cell from EQE data?
I understood the theory and concept behind it but I'm not getting steps how to calculate Jsc from that EQE graph. I only have EQE data (plotted EQE graph with it in origin) and Jsc from I-V characteristics.
Can anyone help me with step by step process of this calculation in details ?
Thanks.
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Here it is, Webapp: Calculate the Integrated Jsc and voltage loss
Also for I-V parameters calculation
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I've contemplated an idea, to implement PID controller as an electronic circuit, attached as an illustration here. This is only a raw idea. I know there should be some Earth branches, but I'm not an electronic engineer and do not have adequate practical auxiliary electronic circuit insight. So, please modify my idea if you see some mistakes. Is error signal e(t); in an embedded controller system, of voltage-type, or of electric-current type? Thank you.
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I am planning to suggest an undergraduate project to design an experimental analog PID controller to regulate the speed of a DC motor. I will be on touch with you guys and provide updates regularly.
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i am trying to design oscillator using onchip inductor available in 45nm technology in Cadence virtuoso but i am not able to get sustain oscillation due to damping. can anyone tell me how to findout damping in the circuits such that we can design W/L ratio of cross coupled pair.
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I have designed and simulated cross-coupled oscillator but am not getting sustained oscillation sir, i want to share the result, here please find the attachment below.
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SIW antenas equivalent circuit
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contact me on my WhatsApp at 7983388622.
OMYA MICROWAVE ConSULTANCY
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I have digitized single channel eeg signal from online database, I want to use the eeg signal to check my eeg acquisition circuit. i.e. I want to design a eeg simulator circuit that would create an analog output of the prerecorded signals fed to them. Could you suggest some papers or circuits that would be helpful.
Thanks in advance to all the members of the research community
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Kiruthika,
This is not a trivial problem.
You've got a CSV file of numbers, and want to somehow transpose them to electrical signals a few microV in amplitude.
Your computer probably lacks a DAC port - those happy days are long gone.
However, it probably has a 3,.5mm audio jack - where you would normally plug in headphones.
First you need to route the CSV data to the audio jack, in some way, using the values to represent simple amplitude.
One way to do that is with Matlab:
Once you have it 'playable' (you could generate a test signal of a simple sine wave and play it to see if it works) you will need a voltage divider (made from two resistors) and a 3.5mm plug.
The 'Large' resistor might be a few 1k ohms, the small one might be a few ohms. The ratio of the two will dictate the size of the signal sent to the EEG input.
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recording cyclic voltammograms of X µ mol·L-1 of analyte in the *buffer pH 7 onto the working electrodes surface at open circuit conditions and following preconcentration by adsorptive accumulation at +0.2 V (versus Ag/AgCl/KCls) for 50 s.
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Recording cyclic voltammograms at open circuit conditions and following preconcentration by adsorptive accumulation involves specific steps and techniques. Here's a general procedure to carry out these measurements:
  1. Electrochemical Cell Setup:Prepare an electrochemical cell consisting of a working electrode, reference electrode, and counter electrode. The choice of electrodes depends on the specific system under study. Common working electrodes include glassy carbon, platinum, or gold electrodes. Connect the electrodes to a potentiostat, which controls the applied potential and measures the current response. Ensure that the electrolyte solution in the cell is appropriate for your study, considering factors such as pH, ionic strength, and buffer composition.
  2. Open Circuit Potential Measurement:Immerse the working electrode in the electrolyte solution and allow it to equilibrate for a sufficient period to reach an open circuit potential (OCP). During this time, no potential is applied, and the system is allowed to stabilize without any imposed voltage. Record the potential of the working electrode relative to the reference electrode using the potentiostat. This potential will represent the OCP of the system.
  3. Preconcentration by Adsorptive Accumulation:Select a suitable potential for the adsorptive accumulation process based on the electrochemical properties of the species of interest. This potential should facilitate the adsorption of the analyte onto the working electrode surface. Apply a constant potential at the chosen value to the working electrode for a specific duration. This allows the analyte to adsorb and accumulate on the electrode surface. The duration of the preconcentration step depends on the analyte's concentration, diffusion coefficient, and desired sensitivity. After the preconcentration step, return the potential to the open circuit condition.
  4. Cyclic Voltammetry Measurement:Perform cyclic voltammetry (CV) by applying a potential sweep to the working electrode while monitoring the resulting current response. Typically, a potential scan is conducted from a starting potential (e.g., the OCP) to a final potential in a forward direction, followed by a reverse scan back to the initial potential. The potential scan rate should be chosen carefully based on the system's characteristics and the desired scan speed. Record the current response as a function of the applied potential during the potential sweep. The resulting cyclic voltammogram will show characteristic peaks, which can provide information about the redox behavior, adsorption/desorption processes, and concentration of the analyte.
It's important to note that the specific experimental conditions, including the potential range, scan rate, and duration of adsorptive accumulation, may vary depending on the system and analyte of interest. It's recommended to consult relevant literature or seek guidance from experienced researchers familiar with the specific electrochemical system you are working with.
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Our laboratory has a PerkinElmer (model: AAnalyst 800) atomic absorption spectroscopy. Recently, the performance of the device has encountered a problem. When the circuit breaker of the device automatically turns off the air compressor, the flame also turns off, and a "No air pressure" error appears on the screen. Due to this issue, we are unable to use the device.
It should be noted that the air compressor has been checked and there is no problem associated with it.
If you can help with your guidance, it will undoubtedly be a great favor to many of our students who are having trouble doing their dissertation tests.
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This means that no enough air or gas reachs the system. This normally caused by air compressor is not working or gas regulator is not will adjusted or selinoid valve problem.
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Power system strength is very important for system planning and protection design. There is one metric "SCR or short circuit ratio" generally mentioned to define the system strength. I have confusion about the definition of this index. Some texts define it as the ratio between short-circuit MVA and rated MVA and some define it in reference to the inverter based resources as the ratio between short-circuit MVA and rated MW of inverter based power source. Few references are attached.
Kindly clarify.
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the short circuit ratio determine internal impedance for each electrical equipment as %UK and how much this is lower level of short circuit is more and when connect to network it can be receive inrush current in start up and when disconnect from network send voltage more toward network in this electrical equipment need used higher range of switch and fuse cable high pot current curve saturation for current transformer and potential transformer over current and protection relay take more attention for set the trip relay and need more survey and connections need mor attention when this equipment failed because SCR is so low all user near it coule be trip or damage.
thanks for attention
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Shape is strange and I may not able to explain this with an equivalent circuit. So, please some one can help me to explain with proper electrochemistry?
This results came for Supercapacitor measurements
I have repeat this and I continuously got this shape, ensure it wasn't mistake
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Since it is repeatable, please check the linearity of your system and that your data is consistent with the Kramers-Kronig relations. Is it possible also to put some frequency values on the Nyquist plot?
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IC will have an equivalent circuit, however microprocessor and microcontroller working through data logics and instructions? How it works internally with VLSI design circuit?
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Human body could be the only example, where CPU Memories and Heart the clock, Hands & Legs are output ports, Eyes, Ears, Mouth, Nose and Skin are input ports and lungs with digestive system the power supply …….
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R(Q(R(C(R(RW)))))(CR).
For a three electrode system viz. working, counter and reference. please explain these parameters.
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Can you provide a picture for this circuit ?
Generally we don't interpret a circuit, we define it relatively to our system.
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photonics integrated circuits (PIC) theories and practices are very highly recommended in P.R.China right now. Can someone kindly raise some courses, materials and other stuff related to the subject?
Thanks.
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I am a beginner in this field and have read from papers that a stable baseline current has to be obtained, the MFC should start its operation in an open circuit potential (OCP) etc. How do I check for OCP?
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The OCP means that there is no change in the potential by injecting feed into the MFC, so the system is stable. This could be evaluated when two consecutive peaks (potential) appear.
You can also take a look at this paper for more illustration (Fig. 2):
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kindly Explain to me what are Rp value and Rct of the 3 RC circuits eg. Rs(R1C1)(R2C2)(R3C3)?
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I don't understand the question. See https://electronics.foxping.com/, Chapter 2 for RC circuits. They link to YouTube video clips.
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Do anyone know about the role of sensory circuiting and does it play significant part in individuals with Hyperactivity? Any supporting material?
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Hi,
Here are a few references:
Adra N, Cao A, Makris N, Valera EM. Sensory Modulation Disorder and its Neural Circuitry in Adults with ADHD: A Pilot Study. Brain Imaging Behav. 2021 Apr;15(2):930-940. doi: 10.1007/s11682-020-00302-w. PMID: 32770315.
Soman SM, Vijayakumar N, Thomson P, Ball G, Hyde C, Silk TJ. Functional and structural brain network development in children with attention deficit hyperactivity disorder. Hum Brain Mapp. 2023 Jun 1;44(8):3394-3409. doi: 10.1002/hbm.26288. Epub 2023 Mar 29. PMID: 36988503; PMCID: PMC10171546.
Pasini A, D'agati E. Pathophysiology of NSS in ADHD. World J Biol Psychiatry. 2009;10(4 Pt 2):495-502. doi: 10.1080/15622970902789148. PMID: 19337883.
Kuo HY, Liu FC. Synaptic Wiring of Corticostriatal Circuits in Basal Ganglia: Insights into the Pathogenesis of Neuropsychiatric Disorders. eNeuro. 2019 Jun 5;6(3):ENEURO.0076-19.2019. doi: 10.1523/ENEURO.0076-19.2019. PMID: 31097624; PMCID: PMC6553570.
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How temperature of source and sample affects electrical conductivity? Which formulas are best fitted to determine the electrical conductivity, resistance, impedance etc. for solid food?
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Find impedance for given voltage by measuring current, Z= V/I, then find resistance using DC source, R= Vdc/Idc. After finding Z and R could find reactance X = Sqarroot of ((Z)(Z)-(R)(R)), inductance L =X/2(pai)(f), where f the frequency…..
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I have been working with ngSpice circuit simulator for a couple of months now and have had to give up because of bad (noisy and glitchy) simulation results. I don't feel like I can trust any of the results I have gotten. I finally attributed this to floating point roundoff errors. My circuit has atto amp to milli amp currents. This wide range is probably what is causing the errors. The best any PC can do is 64 bit floats. In order to prove that my problem is floating point roundoff I am trying to find a site where I can run a Spice simulation that can handle 128 bit floats. Does anyone know of such a site?
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About the 10^16 Ohm resistor, if you mount your circuit in a PCB you will have big fights with surface resistivity, either in FR4, PTFE or other material you will use.
Greetings
S.
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Dear Researchers,
What are the different methods to calculate each parameters in AC conductivity and DC conductivity. Which method is the best method to find resistance and conductivity of thin film. Can we calculate capacitance, impedance, dielectric constants of thin film by the same method of designing circuits.
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I think that there is an essential difference between them. DC conductivity arises from the the random fluctuation motions of the free charge carriers and its net value is very small at room temperature. While on the other hand, AC conductivity arises from hoping of free carriers from site to site upon applying an electric field and thus its net value is much higher than that of DC conductivity.
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Generation of noise is an essential part to ensure the noise tolerance in the circuits.
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Hello,
You can use a noise injection circuit. See the Fig. 13 of the following paper.
S. Goel, A. Kumar and M. A. Bayoumi, "Design of Robust, Energy-Efficient Full Adders for Deep-Submicrometer Design Using Hybrid-CMOS Logic Style," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 14, no. 12, pp. 1309-1321, Dec. 2006, doi: 10.1109/TVLSI.2006.887807.
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Hello All, I simulated a resonator in comsol and I use electromechanical physics. I need displacement in result and I want cir physics at the same time to add resistance. Is it possible?
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Me simulate the B-H curves to V-I of different magnetic materials used in transformers to study the inrush patterns in transformers, could refer my paper “ Laboratory methods to generate inrush current patterns of power transformers “….
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Can you please help derive an equation for Rau with respect to the other parameters from this circuit? Thanks a lot!
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From your schematic i understand that Rau does not depend of the values of other components
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I've designed a metamaterial based Substrate Integrated Waveguide Antenna in HFSS at 28 GHz. Is it necessary to make it's equivalent circuit in ADS or can I just simply add the source as the antenna and start with the fabrication process?
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There is no any relation between fabrication and equivalent circuit of any antenna structure
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Whether it should be with respect to E (reference) or E (open circuit) ? And what is the potential value we need to put? Whether we should consider the onset potential from LSV or at 0V?
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The open circuit potential is the potential at which no current is flowing through the system, and the electrochemical reactions are at equilibrium. Measuring EIS at or near the OCP ensures that the solution resistance dominates the impedance response, minimizing the influence of other electrochemical processes such as charge transfer reactions or mass transport.
When you obtain an EIS plot (Nyquist or Bode plot), the solution resistance can be extracted from the high-frequency region of the plot. In a Nyquist plot, the solution resistance corresponds to the real part of the impedance (Z') at the highest frequencies, which is the intercept of the semicircle with the Z' axis. In a Bode plot, you can find the solution resistance by observing the impedance magnitude at the highest frequencies where the phase angle is close to zero degrees.
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I'm deigning a rectifier for a rectenna at an operating frequency of 28 GHz. I used High Frequency HSMS-2860 diode for the circuit but it didn't resonate at 28 GHz although I did the matching properly using the Smith Chart. Now I want to design the same circuit using the above-mentioned MACOM diode. Can anybody help me out with this?
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@Mohadese, First you need to collect the data from datasheet of desired diode. Then need to model the diode including parasitic components. For example I have included an example of diode modelling of HSMS in the previous answer of training message.
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I am looking for a FAB that can make InP based photonic integrated circuits based on provided custom design, please help me to find one?
Somewhere in china or asian countries will be better
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There are several foundry fabs in different regions that are capable of manufacturing InP (Indium Phosphide) based photonic integrated circuits (PICs) based on custom designs. Here are two well-known foundry fabs that specialize in InP-based PIC fabrications.
Be noted the availability of foundry services for custom InP-based PIC designs may change over time, and recommend to contact the foundry fabs directly for further information.
Wish you have a good luck to make it.
[Asia]
1) CompoundTek Pte Ltd: CompoundTek is a Singapore-based foundry fab that specializes in a wide range of photonic technologies, including InP-based PICs. They offer foundry services for InP-based PIC fabrication, including design, prototyping, and volume production. CompoundTek has a state-of-the-art facility with advanced equipment and processes for InP-based PIC fabrication and has collaborated with various companies and research institutions in Asia and around the world.
2) National Nano Device Laboratories (NDL): NDL is a research institute based in Taiwan (i.e. my home town) that offers foundry services for InP-based PIC fabrication. They have expertise in the design, fabrication, and testing of InP-based PICs, including custom designs for various applications, such as optical communications, sensing, and quantum optics. NDL has a strong research focus on photonic technologies and they are willing to collaborate with international partners on InP-based PIC development.
[US]
Oclaro Inc. (part of Lumentum Holdings Inc.): Oclaro is a provider of optical communication components and modules, and they offer foundry services for InP-based PIC fabrication. They have expertise in various aspects of InP-based PIC manufacturing, including wafer fabrication, device packaging, and testing. Oclaro's foundry services are used by many companies and research institutions for custom PIC designs.
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I fabricated FTO/TiO2/Sb2S3/P3HT/CE solar cell. The counter electrodes I used were Ag and carbon. I used a 0.2 cm2 mask to get the efficiency reading since CE area in every solar cell was not equal in all my solar cells. The CE was fabricated approx. 1 cm2 area in the solar cell. When I measured efficiency in an unmasked solar cell (cell area was roughly measured from the vernier caliper), the open circuit voltage was 0.3 V. When using the mask, open circuit voltage was 0.1 V. Have anyone observed this variation? Could you give me the reason for that? As I understood, the reasons might be
1)the layers were not uniform
2)the generated carriers under sunlight could diffuse all over the layer (the area covered by the mask). Could this reduce by fabricating CE with a low area?
3)cell area effect to the resistance of the solar cell. Could this reduce by fabricating CE with a low area?
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Thank you, sir. I will consider your answers to improve Voc of my solar cell when measurement take using the mask. I will consider about pin holes in TiO2 layer and contact resistance.