Thin Films - Science topic

I am trying to figure out a way of calculating the dielectric constant of a thin film of Yb2O3 on ITO. Assuming that the thickness of the Yb2O3 is known and that it's <5 nm, how does one proceed?

At this point, I hypothesize that this question is composed of two things that I need to figure out:

1. What is the dielectric constant of the thin film of Yb2O3 without any substrate effect?

2. What is the dielectric constant of the combined system?

I would rather be interested in a theoretical approach (simulations) rather than experimentally, but any comments/help are appreciated!

Thanks!

I'm trying to achieve bonding between two different substrates through thermocompression using indium as an adhesion layer. After depositing indium through e-beam evaporation, the thin film is white and not metallic like the pellets. Is this common or an issue?

Is the relationship A=-Log T applicable for calculating the absorbance, in the case of thin layers?

I am trying to understand the influence of polymer films sliding against each other. For the simulation, I saw many molecular dynamics simulations, like LAMMPS, GROMACS, etc. I am new to this field. Can someone who has experience with these methods suggest which one is the best one for the particular case?

Dear,

I have tried to thin film calculation. What is the difference from bulk calculation.

The vacuum added in the z-direction is enough in all calculation (scf, vc-relax and band)

Many thanks

We are trying to sputter a metallic target. We can clearly see the plasma however after depositing for more than 30 minutes there is no deposition on the substrate. What can be the reason for this? need expert advice.

Thanks!

I have obtained XRD results for thin film in bulk mode, kindly suggest different methods to evaluate the residual stresses.

I want to characterize the residual stress in copper thin film deposited on fused silica. Kindly let me know how to do that.

We used CBD method for deposition of Al doped PbS thin films. We observed that thickness of the films decreased with Al increase of Al concentration. But refractive index values are increase with decrease of film thickness or increase of Al concentration.

I think that the XRD for thin film also measured the grain size

I have introduced soc in VASP and I am getting these changes in the bandstructure when I change the SAXIS from 110 (0 deg) to 010(45 deg), also my magmom is in z direction . You can see, near the fermi energy (0 eV). Moreover, it is a calculation of thin film with a substrate MgO. The bands get kindoff splitted. What is actually happening in this?

P.S.- need articles for spin orbit coupling in solids

Hi All

I am trying to understand the Akono scratch test method to find the fracture toughness of thin film. I am scratching the films with a probe radius of 4um (Spherical) with load below the film critical load. this means that the scratch path has no sudden change. For the data analysis, I only using a lateral load segment of scratch and divide it with the spherical shape function. can someone help to understand what is best way is to do this scratch and how to analyze the data.

Thanks for your help.

I have deposited Al doped PbS thin films using CBD method at different concentrations from 0,2,4,6 and 8%. I was observed that thickness of the films decreases with increase of Al concentration. Can explain about the reason

The TPM treatment ensures the film adheres to the substrate after curing. I use N,N-Methylenebis(acrylamide) as the crosslinker, Darocur as the photoinitiator and DMSO as the solvent. I have tried replicating procedures from a few papers with little luck. I need uniform films less than 1.5 microns thick so I can characterize them with ellipsometry.

Thanks

Recently, I cannot use thin-film hydration method to successfully prepare my DPPC MLV. I am sure I didn't change any parameters or steps in my protocol. However. instead of acquiring thin-film, I got transparent aggregation (see attached picture) at the bottom of round bottom beaker after rotavap overnight. The lipid and chloroform I used were purchased two weeks ago so I don't think it is due to the outdated chemicals. I ever doubt rotovaper problem since I found that I could easily pull out the connected beaker even at very high vacuum degree (6mbar). Then I connected a pressure gauge to the rotovaper to test if the rotovaper works well. I tested twice and the gauge pressure very corresponded to the value read from the rotovaper screen. Now, I am so confused, could someone give me any possible explanations about why? Many thanks!

I have deposited iron titanate thin films by electrodeposition at different molar concentration.

Q #1. In XRD pattern of as deposited I don't observe any intensity peak while after performing MF annealing at 300 degree Celcius, I observed intensity peaks. what's the basic reason behind this?

Q #2. At different molar concentration I observed different peaks except two peaks appeard on same plane. what will be main cause behind this?

Hello ResearchGate colleagues!

We are encountering the problem with measuring of refractive indices of thin film lithium niobate.

Typically we measure refractive indices by prism coupling method with two light polarisations (TE- and TM-mode) and in two orthogonal directions (parallel and perpendicular to the wafer base slice).

As a result, we have 4 different refractive indices. This is not typical for bulk lithium niobate. It`s looks like we have biaxial crystal (not Uniaxial like bulk LiNbO₃).

There are a lot of articles with evidences, that thin film lithium niobate has high tensile stress (more than 150 MPa).

Is it possible that internal stress can change the refractive index by 0.01-0.02?

Do you have any databases where we can find photoelasticity coefficients of LiNbO₃?

I will be grateful for any help!

I want to get good films out of them, knowing that the melting process was complete, but the films weren't clear.

When I was doing Raman spectroscopy, I observed that for the same sample (thin film), using two different laser sources gave different Raman spectra. We know Raman Shift is materially dependent property.What could be the reason for difference in Raman spectra?

Laser sources were the He-Cd laser (λ=325 nm), i.e., UV light source, and the He-Ne laser (λ=633 nm), i.e., visible light source.

I tried to coat a ligand layer on the surface of the TiO2 thin film using an oil bath reflux system at 40 degrees Celsius for 24 hours. Previously, I observed the NH2 peak at 1250 cm-1 in FTIR analysis. Currently, I'm unable to determine the repeatability of past data. I'm using DMF solvent. I also tried different parameters like temperature, time, concentration, and solvent.

Can anyone explain what is happening here? If my TiO2 surface is changed, or are there any mistakes from my side? I would like to get advice from people with similar experiences or related experts.

In other words, is the use of a model to retrieve n and k of a thin film from measured psi and delta essential in ellipsometry? or we can solve this two-equation, 2 unknowns numerically?

From the Au signal

The part of my PhD research is to study the influence of real structure of thin film lithium niobate on kinetics of reactive ion etching.

We use NanoLN lithium niobate on insulator (LNOI) wafers.

Obviously, that SmartCut technology, which used for wafer fabrication, is associated with He-ion irradiation of the structure that leads to formation of structural defects. The high degree of point defects (vacancies and interstitial atoms) cannot be completely eliminated by annealing. There should be dislocation loops formation.

We experimentally revealed (by etch pits methods) that surface dislocation density on LNOI wafers is higher than on bulk LN (CQT wafers).

This affects the etching process in the plasma.

Maybe anybody can share any relevant researches.

A thin layer resembling a white callus was formed on the stem of a tomato plant transplanted from rooting food to soil. Is this dangerous for plant growth? No such situation was observed in the control plant.

I deposited Ga₂O₃ thin film on fused quartz substrate at 500^oc in Ar ambient by RF sputtering and then annealed at 900^oc (very slow heating and very slow cooling i.e 1^oc/min) in air ambient for 1 hour . Then I can see cracks on the film by optical microscope. But there was no cracks after deposition. How can I get crack-free film?

How can we understand how the air around us rises and warms?

We think of air as a thin layer of plastic. About the size of a large balloon, this invisible balloon is called a "spot", a piece of air. The air package can expand and contract freely, but neither the external air nor the air

The heat is able to mix with the air inside. As the piece moves, it does not break, but remains as a single unit. At Earth's surface, the package has the same temperature and pressure as the air around it. Let's say we lift the package because when we go into the atmosphere, it decreases. As a result, as the package increases, it enters an area where the air pressure is around it. For lower pressure values, the molecules of the package inside the hidden walls push outward. Since there is no other source of energy, the air molecules inside the package use some of their energy to expand, this loss of energy indicates that the molecular speed is slower, which indicates a lower temperature. Hence, any air that rises all the time expands and cools. If it decreases depending on the surface of the earth, it brings it to an area. Where the air pressure is higher, the pressure outside is higher (compressed). Its original size (smaller) should be closed. Because the air molecules become faster, the speed after the collision of the two sides of the package collapses, the average speed of the molecules goes inside; For example, a ping pong ball moves faster. After hitting the paddle that is moving in that direction. This increase is shown in the molecular speed. Warm temperatures hence any air that sinks. The compression that decreases as we go up into the atmosphere. As a result, as the package rises, it enters an area where the air pressure is around it.

For my tantalum pentoxide thin film integrated capacitors, I need to etch the tantalum and tantalum pentoxide layers with pure SF6 plasma. While etching these layers copper will also be exposed to the plasma. Does anyone know if the copper will be etched too (and if so at which etch rates) and if it reacts in a form so that the copper will no longer be conducting?

For making a thin layer of Mo

I am depositing superconducting thin films (mainly Bi-2212). I have had troubles understanding why their resistance is so high and the superconducting transition temperature comparably low when it comes to films I did way back.

My potential issue:

For the deposition process, the target is rotated by an external motor outside of the chamber leading inside. A while back when my films were good, I had to change this motor. I found the new motor leaked oil into the chamber which might have vaporized and degraded the films during depposition. There was yellow redsidue on the chamber wall.

I cleaned the chamber with ethanol and switched to a motor without oil (or so the technitian ensured me). The chamber was then heated to 800°C under vakuum to get rid of all the residues.

However, I still find a yellowish-brown layer in my chamber after each deposition.

Of course, I also use a cooling trap vor the vacuum pump, so it cannot come from there.

Any ideas on what to do in this situation?

Have any of you had similar issues?

Hi,

In my FDTD simulation result of transmission intensity for IR source (12 µm) over thin film ( thickneess 4µm) at different angles, I found that the intensity is maximum when theta angle is 30.

may i know what could explain this and is there any experiment result to verify?

thanks

I have synthesized Polyaniline via chemical oxidative polymerization. I need to prepare a thin film of the same by using spin coating. But I am not sure which solvent to proceed with. Any imsights in this regard is appreciated.

Note: Its polyaniline emeraldine solvent PANI-ES. Solvent should not affect its form as other forms are non conductive.

My sample is PEDOT: PSS, and I want to measure thermal conductivity and Seebeck coefficient using TFA Linseis. Perhaps someone has experience with this. I tried to use the drop-casting technique to deposit the PEDOT: PSS, but it did not attach perfectly to the chip. Thank you for the help~

I am working on metal oxide thin films for gas sensing. I want you to develop thin films for our paper. Whole responsibility for analysis and writing, editing of paper will be done by me

I am doing a fluorescence spectroscopy experiment of a nafion thin film with HPTS dye and running it using salt solutions for humidity. But, at High Humidity such as 70% it starts condensation inside the chamber ( a closed box ; inside it I keep my sample to humidify).

Liposome XRD-SEM

Using a spray coating setup, is it possible to coat a uniform layer of thin film using an as-synthesised powder?

In my study, all films were grown on the stibnite (polycrystalline) structure of Sb2S3. When I changed a parameter of a group of films, I observed that XRD peak intensities increased, while Raman peak intensities decreased. Although we repeated the analyses, we encountered the same results. What is the reason for the decrease in Raman peak intensities despite the increase in XRD peak intensities?

The presence or absence of sharp peaks in the diffraction graph of pure anthracene derivative versus thin films can be influenced by various factors. what are some potential reasons for the observed differences. There is sharp peak in the diffraction graph of pure anthracene derivative but not in the thin films are synthesised

I have a catalyst sample consisting of various metal oxides in powder form. However, I would like to convert it into a thin film before conducting sample characterization and catalyst performance testing. How can I create a thin film from the metal oxide powder without altering its properties and without adding polymer? Thank you very much in advance.

I measured the Thickness of the thin film using ellipsometry. But, now i want to study the swelling of thin film using 500 ul liquidCell alpha ellipsometry. Looking for some reference papers and suggestions on how to approach this?

Hello Everyone,

I have deposited solution-processed RuOx thin film on flexible PET substrates. In order to measure the thickness of the RuOx thin film,can we use an ellipsometer for thickness measurement? If not, then what would be the alternative approach?

As we know that RF power have demonstrate its great advantage on film properties with magnetron sputter. But, this technique had been applied only to planar targets.

Known advantages of rotary cylindrical target compared to planar targets,so it's attractive to expand the use of RF power to rotary cylindrical target . But I haven't seen any equipment combinations like that, neither any research literatures on that. I want to know why? what will happen if i deposit thin films (such as ITO film) with RF power rotaty cylindrical target?

In Case of metals, the static and dynamic demagnetizing factors do not coincide since the skin depth creates a scenario where the microwave effectively excite only a thin film. So to fitting of freq vs resonance field what will be more accurate expression for the polycrystalline bulk metal.

I hope you're all doing well. I am a PhD student at İstanbul University and I study on thin film fabrication and characterizations. I observe all XRD peaks of PZT after I annealed the film although there exist some cracks on the surface. However, whenever I coat top electrode, its short circuit to bottom electrode due to cracks. Before annealing, no XRD peaks are observed.

I am stuck in annealing process of PZT since the surface of thin films cracks. I fabricate thin films via RF magnetron sputter and anneal them 1 hour in a furnace between 400 - 650 ℃ with an increase of 50 ℃. Ramping up is 3 or 6 ℃/min, ramping down is 1 ℃/min or I let the furnace to cool down to room temperature naturally (~10 hours). No gas is introduced into furnace. Could you please help me about annealing process? How do you carry out annealing for PZT? Like in how many hours you reach to 650 ℃ and in how many hours it cools down to room temperature? I can't make PZT film without cracks. I also will try RTA and I need your suggestions for both the furnace and RTA. Thanks in advance. [The surface of the film is attached = PZT(1.3µm)/Pt(100nm)/Ti(10nm)/SiO2(300nm)/Si(350µm)]

We want to run a large number of Monte Carlo simulations to obtain electron trajectories in a thin film at different incident electron enegies, different target thickness and different incident angles. Is there any Monte Carlo software can perform such simulations in batches?

We are able to perform a Monte Carlo simulation for each condition by using the software Casino. However, we cannot run it in batches.

Thanks.

Hello everyone, I synthesized this thin film using the sol-gel dip coating method without annealing. I would like to ask those who have previously synthesized thin films about their opinion on the quality of this film.

Hi All,

I would like to know if someone is familiar with the PSemi-M0 oscillator? I'm trying to fit ellipsometry data from a metal oxide thin-film with an indirect band gap.

Many thanks in advance for any information

Is it possible to study the effects of gamma irradiation to thin films with a Monte Carlo simulator?

I am interested in purchasing a BTO target and sputtering it to make ferroelectric thin films for integrated photonics applications. I was told it's too toxic because of the barium content, but I've seen many papers on sputtering this material with no mention of associated danger.

Does elemental barium or some other toxic compound actually get liberated in the process of sputtering BTO?

How can I safely go about sputtering this material without causing harm to other users of the shared coating chamber in my lab?

We are using ellipsometery to find thickness of MEH-PPV thin films and MEH-PPV/GQD? What could be most appropriate model to fit the ellipsometery data to get correct thickness as well as n and k parameters?

I want to take measurements for the I-V characteristic in resistivity calculation of metal oxide thin films. Can I do this using a potentiostat, especially in a solution-free environment, with two electrode connections? If possible, which technique should be used (for example, pulse voltametry, etc.). Thanks in advance.

If I have powder, can I spray coat it on a substrate to make solar cells? Because my powders required some high-temperature post-synthesised process, which I can't do by making film.

Xrd, FWHM

Dear community,

I am working on X-ray photoelectron spectroscopy (XPS) on amorphous silicon carbonitride thin films. My material mostly exists in mixed environments, i.e., silicon bonded to carbon and nitrogen in its local chemical environment as SiC3N. I assume XPS gives only one Si 2p signal from the mixed environment. In a situation like this, is it appropriate to deconvolute the silicon spectra into two peaks corresponding to the Si-C and Si-N bond environment?

If I fit one peak, the residual STD is greater than 1.5. Or should I fit two peaks for Si2p 3/2 and Si2p 1/2 with a spint-orbit splitting energy of 0.6 eV?

We are trying to prepare CdZnS thin film using Cadmium nitrate, Zinc nitrate, thioacetamide and ammonia solution in chemical bath deposition technique. Our thin film of CdZnS is not uniform in thickness and there are some grains which drops after deposition. How can we improve the quality of CdZnS?

i want to study the compactness of thin film. could anyone suggest which instrumentation i can use? thanks

It is known that W-H plot can be used to find crystallite size of nanoparticles. But, is it correct to follow the same method to find crystallite size of thin films?

Hello,

I am going to conduct a case study which must be related to thin film and nanoparticles. I am asking some tips or topics related to them?

I'm questioning my self how effective hall measurements on anti-ferromagnetic materials are. At the moment I try to achieve hall measurements on Nickel-Oxide and failed numerous times.

Is this due to the anti-ferromagnetism? As I understand right, the material itself orients spins plain wise that they counter each other. But does this prevent an external magnetic field from penetrating the thin film and interact with the mobile charge carriers?

The reported mobilities and carrier concentrations vary from 1E-3 to several 100 cm^2/Vs and 1E12 1/cm^3 to 1E18cm^3, respectively. Considering the d-orbitals to participate in transport, I would assume the mobility is around 1 cm^2/Vs or slightly larger, similar to amorphous-Si.

Any suggestions on improving Hall-measurements on NiO? At the moment, I use structured NiO crosses with sputtered Au-Contacts(attached) on SiO2-Si Substrates. I will check on Ni-Contacts too. I'm using a LakeShore M91 Tabletop Hall-Setup with High Resistance option (1GOhm). Could anyone clarify on this topic or provide some tips on the measurements?

Can anyone suggest a commercial available polymer which is porous in nature and can potentially form thin film.

I have a gold substrate, which is fabricated with a TiO2 thin film. I have some organic solid impurities on this surface. The impurity contains C, H, O, N, and S elements. However, the mass of the impurity is 200 ng (maximum). How can I qualitatively characterize the presence of this impurity? Is XPS the only way?

For preparing PVA thin films I've tried dissolving PVA in various solvents in all suitable temperature conditions. Even stirring overnight, it still has not dissolved. Kindly suggest the possible solvent or conditions for dissolving 186,000 Mw PVA.

1) During BST (Ba0.5Ti0.5TiO3) deposition on Si, SiO2, Al2O3 substrate after platinum deposition, I am getting porosity in BST sample which creating difficulty in making capacitor of BST thin film. Please let me know what parameter we can change to reduce porosity of BST thin film. I am using 300mj energy and oxygen pressure 0.4mbar during deposition and in-situ annealing.

2) I am making also BaFe12O19 on Al2O3. After annealing ex-situ i am getting well know XRD but does'nt showing FMR response.

Please let me know how can i remove these two problems

It is common to get resistance value from the I-V curve generated by two-point probe. However, if the two points are taken on the surface of the thin film layer, how can I get the resistivity? According to the resistivity formula expressed with resistance, the area is required. However, in this case, what is the 'area'?

Hello,

I know that profex, Mercury and MAUD can all fit powder XRD data to structual data given by an CIF file for example.

However, I can't find a free software where I can fit only the peaks along a given direction, for instance only along [001]. Whenever I load my CIF file into the software it shows all possible XRD peaks you would get when you do powder diffraction, this I can obviously not fit with my thin film data.

Thank you and have a nice day,

Simon

I am using Terahertz time domain system to measure the thickness of a thin film on a substrate. I am able to calculate the thickness of substrate(~100um) alone. But what signs should I see for if there is a thin film ( ~100nm) on this substrate. I am not willing to do the fft ! Can time domain signal alone determines the thickness of film. The resolution is 33fs.

What is the cause of dark current in ferroelectric materials and basically dark current depends on which factors in the ferroelectric thin films ?

As per the literature, NiO thin films can be etched in an RIE system using Cl2- based gas. Will there be any contamination issues if I use an RIE system dedicated to III-V group material (e.g.-GaN, GaAs)?

Any kind of suggestions would be a great help for my research work.

Thanks,

One of the 20 fundamental vibrations of benzene occurs at 1309.8 cm^-1, corresponding to the B_2u symmetry. According to the rule of mutual exclusion, this vibration is forbidden in Raman and ATR spectroscopy. However, in a complex with benzene, we observe strong IR activity at 1309.8 cm^-1 in ATR. Why is this?

I fabricated nanotubes thin film on a substrate using top down approach, can I find it's surface area using BET analysis.

should i use RF sputtering to prepare MoS2 thin film ?. or what is the best method ?

Sputtered thin film from a SnO2 target presented as ETL in a perovskite solar cells produced a S-shape JV curves. I verified the formation of SnO2 through xps and the energy levels are not that different from SnO2 nanoparticles films. Any statements about this issue? The deposition is a room temperature and 10% O2. Many thanks for any suggestions

I need invitation letter to visit lab for elaborate ZnS co doped (Co, Ag) in October or November 2023

The precursors are SnCl₂.2H₂O, PbCl_2, and water as solvent.

Which substrate can we use for spinel ferrite (CoFe2O4) thin films? I am looking for CVD method for thin film.

I did raman spectra of SiO2 thin film of around 800 nm thickness on grown on Si(100). But i am not clear about the peak of SiO2. Where it is/are actually in the attached file?

Hello everybodoy.

I am interested in any reference about thin magnetic monolayeres with perpendicular magnetic anisotropy produced ( in particular by PVD ) on Al substrate or sandwiched between two layers of Al.

Thank you very much in advance.

Could anyone provide any suggestions or pdf to calculate absorption coefficient of thin film without using film thickness?

Thanks in advance

Hi Sirs,

How can rate the adhesion strength of thin film after scratch hatch test (tape test) by accurate method ?

I know That the tested area is examined with Magnification glass and adhesion strength is rated according to the amount and removed coating but what the accurate ways??

thanks